Device characteristics of 0.35 μm P-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming

✍ Scribed by Ohnakado, T.; Onoda, H.; Sakamoto, O.; Hayashi, K.; Nishioka, N.; Takada, H.; Sugahara, K.; Ajika, N.; Satoh, S.

• Book ID: 114537876
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 250 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.784186