Device characteristics and metal–dielectric high reflectivity coating analysis ofλ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers

✍ Scribed by Leem, J. W. ;Yu, J. S.

• Book ID: 105365484
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 279 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925166

✦ Synopsis

Abstract

The cavity length‐dependent characteristics of compressively strained InGaAsP/InGaAsP multiple quantum well planar buried heterostructure lasers operating at λ ∼ 1.3 µm were investigated under continuous‐wave mode. The uncoated 600 µm long laser exhibits P~max~ = 33.6 mW and I~th~ = 12.9 mA at 25 °C with d__λ__/d__T__ = 0.35 nm/K and d__λ__/d__P__~e~ = 0.044 nm/mW, leading to stable beam characteristics of 19.7° (parallel) × 24.1° (perpendicular). From the inverse slope efficiency versus cavity length plot, the loss parameters of internal differential efficiency (η~i~) and internal optical loss (α~i~) were extracted, i.e., η~i~ = 78% and α~i~ = 10.6 cm^−1^. The transparent current density of J~tr~ = 0.12 kA/cm^2^ and modal gain of G = 49.5 cm^−1^ were also estimated from cavity length‐dependent threshold current density measurements. Metal–dielectric Au/Ti/SiO~2~ layers for high reflectivity (HR) coating were analyzed using theoretical calculations and experimental results. For the HR‐coated 600 µm long laser with Au (150 nm)/Ti (5 nm)/SiO~2~ (250 nm), P~max~ increased up to 61 mW at 25 °C with a reduced I~th~ of 10.6 mA compared to the uncoated laser, providing an HR of about 94%.