✦ LIBER ✦

Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

✍ Scribed by Carlo Cercignani; Irene M. Gamba; Joseph W. Jerome; Chi-Wang Shu

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 864 KB
Volume: 181
Category: Article
ISSN: 0045-7825
DOI: 10.1016/s0045-7825(99)00186-3

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✦ Synopsis

This paper describes benchmark comparisons for a GaAs n À n À n diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-®eld (augmented drift-diusion) model.