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Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

✍ Scribed by Leung, G.; Lai, L.; Gupta, P.; Chui, C. O.


Book ID
114621017
Publisher
IEEE
Year
2012
Tongue
English
Weight
674 KB
Volume
59
Category
Article
ISSN
0018-9383

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