The combination of distillation, Bridgman-Stockbarger, hydrothermal recrystallisation and travelling molten zone (TMZ) methods were used for TlBr purification. Grown crystals were characterised by XRD rocking curve and FTIR spectroscopy methods, and by electrical measurements made from 200 to 300 K.
Development of the technology for growing TlBr detector crystals
β Scribed by M.S. Kouznetsov; I.S. Lisitsky; S.I. Zatoloka; V.V. Gostilo
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 230 KB
- Volume
- 531
- Category
- Article
- ISSN
- 0168-9002
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β¦ Synopsis
The results of the development of the TlBr crystals growth technology are presented. For the purification of the TlBr salts, the combination of the vacuum distillation (VD) methods and directed crystallization (DC) was applied.
The processes of the vacuum distillation were made in the vertical one-zone pipe furnace with the resistance heater. The equipment for the processes of directed crystallization is the vertical two-zone pipe furnace with the resistance heater. The processes of growth were made at the same device as DC, but with slightly modified modes. Technology modes for all technological processes are presented.
All investigated crystals were grown from the melt by Bridgman-Stockbarger method. The values of the specific resistance of the grown crystals, the ratio of the transport characteristics of the electrons and holes are presented. The possible technological reasons affecting the electrophysical parameters of the crystal are analysed.
The results of the development of the single and pixel detectors on the basis of the developed crystals are presented.
π SIMILAR VOLUMES
The processing method for obtaining the high-quality surfaces of TlBr single crystals, providing removal of a mechanically destroyed surface layer by chemical etching, is developed. The crystals grown from the melt of purified materials by the Bridgman-Stockbarger method were used for the experiment
TlBr is a promising material for gamma-ray detectors; however, it has crystal quality problems originated from the crystal growth itself and further treatments during detector fabrication. The effect of technological improvements on crystal quality has been studied in this work. Low performance of s