Development of PLZT dielectrics on base metal foils for embedded capacitors

✍ Scribed by U. Balachandran; D.K. Kwon; M. Narayanan; B. Ma

• Book ID: 104023119
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 545 KB
• Volume: 30
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2009.05.006

✦ Synopsis

We have deposited Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films on nickel and copper substrates to create film-on-foil capacitors that exhibit excellent dielectric properties and superior breakdown strength. Measurements with PLZT films on LaNiO 3 -buffered Ni foils yielded the following: relative permittivity of 1300 (at 25 • C) and 1800 (at 150 • C), leakage current density of 6.6 × 10 -9 A/cm 2 (at 25 • C) and 1.4 × 10 -8 A/cm 2 (at 150 • C), and mean breakdown field strength ≈2.5 MV/cm. With PLZT deposited directly on Cu foils, we observed dielectric constant ≈1100, dielectric loss (tan δ) ≈0.06, and leakage current density of 7.3 × 10 -9 A/cm 2 when measured at room temperature.