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Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect

✍ Scribed by Park, Jin-Kwon; Cho, Won-Ju


Book ID
120346504
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
989 KB
Volume
101
Category
Article
ISSN
0003-6951

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