Development of high efficient green LEDs of ZnSSe:Te-ZnMgSSe DH structure on p-GaAs and its degradation mechanism
✍ Scribed by T. Abe; K. Makimoto; M. Adachi; T. Tanikawa; N. Inoue; T. Nishinaga; H. Kasada; K. Ando
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 232 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1862-6351
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✦ Synopsis
Abstract
We present new green double‐hetero (DH) structure light‐emitting diodes (LEDs) of ZnSSe:Te (active layer)–ZnMgSSe (cladding layer) on p‐type GaAs substrates grown by molecular beam epitaxy (MBE).We have confirmed very efficient green emission in Te‐bias modulation doped ZnSSe:Te consists of ZnSSe:Te (Te: 2%, 50 Å)/ZnSSe:Te (Te: 5%, 50 Å) superlattice. A LED with this modulation doping also shows a strong durability for device degradation due to effective Te‐hardening effect. A new LED structure on ptype GaAs exhibits a high extraction efficiency of light emission, which is three times larger in magnitude than LEDs on n‐type GaAs. The new LED also reveals a long device lifetime (in bare chip) over 1300 hours under 3A/cm^2^ at room temperature. From a simple aging test on the green LEDs, gradual degradation is classified into “slow‐mode degradation”, which is caused by a generation of point defects (donor‐like centers) in p‐type ZnMgSSe cladding layer. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)