Development of current-based microscopic defect analysis methods and associated optical filling techniques for the investigation on highly irradiated high resistivity silicon detectors

Development of current-based microscopic

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

✍ Z. Li; C.J. Li 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 175 KB

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (F n X10 13 n/cm 2 ) high-res