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Development of AlInGaN based blue-violet lasers on GaN and SiC substrates

✍ Scribed by Rumbolz, C. ;Brüderl, G. ;Leber, A. ;Eichler, C. ;Furitsch, M. ;Avramescu, A. ;Miler, A. ;Lell, A. ;Strauß, U. ;Härle, V.

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
246 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We present a process for high quality InGaN laser diodes on free standing GaN substrates with high reproducibility. We demonstrate a self‐aligned process to contact lasers with ridge width <2 μm. The stability of the process allows us to optimize the epitaxial structure on GaN substrates and we achieve cw‐threshold current densities of 2.9 kA/cm^2^ for 10 μm wide ridges and 4.7 kA/cm^2^ for 1.5 μm wide ridges. Cw‐slope efficiencies of 1.0 W/A are achieved for both widths. Beside this we notice a reduction of the ideality factor and the forward bias linked to an improvement of the epitaxial interfaces. For maximum optical output we could achieve 3.4 W from one output facet at pulsed operation and a catastrophic optical mirror damage (COMD) level of 67 MW/cm^2^. Furthermore we observe a dependency of the COMD level from the pulse width corresponding to filament formation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Comparison of degradation mechanisms of
Comparison of degradation mechanisms of blue-violet laser diodes grown on SiC and GaN substrates
✍ Furitsch, M. ;Avramescu, A. ;Eichler, C. ;Engl, K. ;Leber, A. ;Miler, A. ;Rumbol 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 270 KB

## Abstract In this work we present degradation studies of GaN based blue‐violet laser diodes grown on different substrates. By replacing the SiC substrate by GaN substrate, we change from hetero to homo epitaxy, while the threading dislocation density (TDD) is reduced by 3 orders of magnitude. A d