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Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

✍ Scribed by Heller, E.R.; Vetury, R.; Green, D.S.


Book ID
114620392
Publisher
IEEE
Year
2011
Tongue
English
Weight
351 KB
Volume
58
Category
Article
ISSN
0018-9383

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