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Development of a silicon oxide-based resistive memory device using a spin-on hydrogen silsesquioxane precursor

✍ Scribed by Rice, Zachary P.; Briggs, Benjamin D.; Bishop, Seann M.; Cady, Nathaniel C.


Book ID
121869264
Publisher
Cambridge University Press
Year
2012
Tongue
English
Weight
282 KB
Volume
27
Category
Article
ISSN
0884-2914

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