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Determining the oxygen content in partly oxidized silicon nitride

✍ Scribed by K. K. Kolobova; V. S. Yakovleva; E. L. Zakharov


Book ID
112506374
Publisher
Springer US
Year
1966
Tongue
English
Weight
397 KB
Volume
7
Category
Article
ISSN
1573-9139

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This work reports a detailed study of the re-oxidation effects on the hydrogen content and optical properties of silicon oxynitride films grown by plasma enhanced chemical vapor deposition (PECVD) with N 2 O, NH 3 and SiH 4 as the precursors. Results showed that the silicon oxynitride deposited with