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Determination of the single interstitial migration energy from stored energy and thermal resistivity changes in irradiated graphite

✍ Scribed by Donald G Schweitzer


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
609 KB
Volume
2
Category
Article
ISSN
0008-6223

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✦ Synopsis


The model used to evaluate the single interstitial migration energy from property changes due to interstitials is extended to account for vacancy contributions. The annealing function obtained can be used to determine the relative contributions of the defects and is sufficiently sensitive to distinguish vacancy effects that are an order of magnitude less than interstitial effects. Application of the model to stored energy and thermal resistivity data yields the same values of the activation energy and temperature independent term obtained from c-axis and macroscopic length expansion rates, The results indicate that the stored energy associated with the d&interstitial is at least ten times greater than the stored energy associated with the vacancy. The minor role of vacancies in phonon scattering is discussed. The annealing function obtained from electrical resistivity changes in irradiated graphite is explained by assuming that the ratio of charge-carriers to scattering centers varies with irradiation temperature below 55°C. Above this temperature the changes are attributed to equal contributions from vacancies and interstitials. I. INTRODI.JCTION Xiu OTHER