Reflectance Difference Spectroscopy of G
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Lastras-Martínez, L.F. ;Rönnow, D. ;Cardona, M. ;Specht, P. ;Santos, P.V. ;Eberl
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Article
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1998
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John Wiley and Sons
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English
⚖ 154 KB
We report Reflectance Difference (RD) measurements on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1X7 to 5X0 eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap