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Determination of the piezo-optical properties of semiconductors above the fundamental gap by means of reflectance difference spectroscopy

✍ Scribed by Rönnow, D.; Lastras-Martínez, L. F.; Cardona, M.; Santos, P. V.


Book ID
115388582
Publisher
Optical Society of America
Year
1999
Tongue
English
Weight
251 KB
Volume
16
Category
Article
ISSN
1084-7529

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Reflectance Difference Spectroscopy of G
✍ Lastras-Martínez, L.F. ;Rönnow, D. ;Cardona, M. ;Specht, P. ;Santos, P.V. ;Eberl 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB

We report Reflectance Difference (RD) measurements on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1X7 to 5X0 eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap