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Determination of the depth distribution of carriers in silicon molecular beam epitaxially grown material by electrochemical capacitance-voltage measurements

✍ Scribed by Song Kechang; J.-M. Baribeau; D.C. Houghton; J.A. Jackman


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
415 KB
Volume
184
Category
Article
ISSN
0040-6090

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