✦ LIBER ✦

Determination of the carrier density and effective mass of the two-dimensional electron gas at AlxGa1−xAs/GaAs heterostructures

✍ Scribed by T. W. Kim; Y. T. Lee; K. H. Yoo; G. Ihm; S. C. Lee

Book ID: 104914339
Publisher: Springer
Year: 1992
Tongue: English
Weight: 243 KB
Volume: 11
Category: Article
ISSN: 0261-8028
DOI: 10.1007/bf00729913

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Thermomagnetic behaviour of the two-dime

Thermomagnetic behaviour of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures

✍ H. Obloh; K. Von Klitzing; K. Ploog; G. Weimann 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 111 KB

Thermopower measurements on the two-dime

Thermopower measurements on the two-dimensional electron gas of GaAs-AlxGa1−xAs heterostructures

✍ H. Obloh; K. von Klitzing; K. Ploog 📂 Article 📅 1984 🏛 Elsevier Science ⚖ 47 KB

Electronic properties of the two-dimensi

Electronic properties of the two-dimensional system at GaAs/AlxGa1−xAs interfaces

✍ Gerhard Abstreiter 📂 Article 📅 1980 🏛 Elsevier Science ⚖ 62 KB

Modulation doped inverted and normal GaA

Modulation doped inverted and normal GaAs/AlxGa1−xAs heterostructures: influence of Si-segregation on the two-dimensional electron gas

✍ K. Köhler; P. Ganser; M. Maier; K.H. Bachem 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 434 KB

Influence of defects on the temperature

Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped AlxGa1−xAs/GaAs heterostructures

✍ S. G. Dmitriev; K. I. Spiridonov 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 57 KB

Determination of the carrier density dep

Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra

✍ E. Tiras; M. Tanisli; N. Balkan; S. Ardali; E. Iliopoulos; A. Georgakilas 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 336 KB

## Abstract The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532 nm (2.33 eV) line of laser was used as the excitation source. Lower b