Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunnelling diodes
✍ Scribed by K. Fobelets; R. Vounckx; J. Genoe; R. Mertens; G. Borghs
- Book ID
- 103919075
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 314 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Conduction band offsets for strained InGaAs/AlAs heterointerfaces have been deduced from a great number of current-voltage measurements on GaAs/AlAs/lnGaAs resonant tunnelling diodes with different In concentrations, at room temperature and liquid nitrogen temperature. The method is based on the determination of the peak voltage of the resonant tunnelling diodes. Simple analytical techniques, using the well known GaAs/AlAs/GaAs resonant tunnelling diodes as a reference system, give us the conduction band offsets of the measured system. A profound error analysis showed an accuracy comparable to other techniques. This quite simple method offers great potential to determine the band offsets of strained layer heterointerfaces.