✦ LIBER ✦
Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections
✍ Scribed by Kumar Chanana, Ravi
- Book ID
- 111986016
- Publisher
- American Institute of Physics
- Year
- 2011
- Tongue
- English
- Weight
- 844 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0021-8979
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