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Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

✍ Scribed by Wessels, Bruce W.

Book ID
126507645
Publisher
American Institute of Physics
Year
1976
Tongue
English
Weight
387 KB
Volume
47
Category
Article
ISSN
0021-8979

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Deep levels in homoepitaxial boron-doped
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## Abstract Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron‐doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristi