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Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements

✍ Scribed by Qasrawi, A. F. ;Gasanly, N. M.


Book ID
105365028
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
300 KB
Volume
205
Category
Article
ISSN
0031-8965

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