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Detailed modeling of sub-100-nm MOSFETs based on Schrödinger DD per subband and experiments and evaluation of the performance gap to ballistic transport
✍ Scribed by Curatola, G.; Doornbos, G.; Loo, J.; Ponomarev, Y.V.; Iannaccone, G.
- Book ID
- 114617911
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 576 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
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