Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity
โ Scribed by Chao-Yuan Jin; Kojima, O.; Inoue, T.; Kita, T.; Wada, O.; Hopkinson, M.; Akahane, K.
- Book ID
- 114565811
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 719 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9197
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๐ SIMILAR VOLUMES
We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optica
## Abstract We report on electron spin physics in a single chargeโtunable selfโassembled InAs/GaAs quantum dot. The hyperfine interaction between the optically oriented electron and nuclear spins leads to the polarization of the quantum dot nuclei. The sign of the resulting Overhauserโshift depends