Desorption process of Ga atoms from the mask surface in selective area growth of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam epitaxy (ECR-MBE)

✍ Scribed by Norio Yamamoto; Naoto Kondo; Yasushi Nanishi

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 246 KB
• Volume: 108
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(91)90393-j