Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency

✍ Scribed by F.G Della Corte; F Pezzimenti

• Book ID: 117145563
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 389 KB
• Volume: 299-302
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/s0022-3093(01)01101-2