Design of a high-gain FET amplifier operating at 4.4-5.0 GHz
β Scribed by Sechi, F.N.; Paglione, R.W.
- Book ID
- 119797603
- Publisher
- IEEE
- Year
- 1977
- Tongue
- English
- Weight
- 888 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0018-9200
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this paper, a 4.2-5.4 GHz, ΓGm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 lm SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase no
Preparation and Characterization of Pr 1-x SrxMnO 3Β±Ξ΄ (x = 0, 0.15, 0.3, 0.4, 0.5) as a Potential SOFC Cathode Material Operating at Intermediate Temperatures (500-700 β’ C). -Sr-doped title praseodymium manganite powders are prepared by citrate synthesis and pyrolysis and characterized by powder XR