Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

✍ Scribed by Charmi, Morteza; Orouji, Ali A.; Mashayekhi, Hamid R.

• Book ID: 120937886
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 650 KB
• Volume: 16
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2012.09.019