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Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model

✍ Scribed by Mukunda B. Das; Michael L. Roszak


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
730 KB
Volume
28
Category
Article
ISSN
0038-1101

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