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Design and simulation of ZnO-based light-emitting diode structures

✍ Scribed by Han, Sang Youn; Yang, Hyucksoo; Norton, D. P.; Pearton, S. J.; Ren, F.; Osinsky, A.; Dong, J. W.; Hertog, B.; Chow, P. P.

Book ID
121529183
Publisher
AVS (American Vacuum Society)
Year
2005
Tongue
English
Weight
787 KB
Volume
23
Category
Article
ISSN
0734-211X

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati