Design and optimization of an npn silicon bipolar phototransistor for optical position encoders

✍ Scribed by G.F. Dalla Betta; G.U. Pignatel; G. Verzellesi; P. Bellutti; M. Boscardin; L. Ferrario; N. Zorzi; A. Maglione

• Book ID: 104157846
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 683 KB
• Volume: 29
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(97)00070-0

✦ Synopsis

We describe an activity ;timed at developing npn silicon bipolar phototransistors to be used in optical position encoders. Extensive numerical process and device simulations have been can:ied out, providing the guidelines for the defin fion of the phototransistor fabrication process. Results fi:om the electrical and optical characterization of manifactured devices are: shown. With respect to the designed fabrication process, only a little adjustment of the technological parameters has proven to be necessary to achieve a final product suitable for the intended application.