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Design and fabrication of double modulation doped InAlAs/lnGaAs/InAs heterojunction FETs for high-speed and millimeter-wave applications

✍ Scribed by Dong Xu; Heiss, H.G.; Kraus, S.A.; Sexl, M.; Bohm, G.; Trankle, G.; Weimann, G.; Abstreiter, G.


Book ID
114537152
Publisher
IEEE
Year
1998
Tongue
English
Weight
291 KB
Volume
45
Category
Article
ISSN
0018-9383

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