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Design and characteristics of 4 µm period ion-implanted bubble devices with major line block replicate gate

✍ Scribed by Yamagishi, K.; Satoh, Y.; Miyashita, T.; Ohashi, M.; Betsui, K.; Matsuda, K.; Komenou, K.


Book ID
114646851
Publisher
IEEE
Year
1983
Tongue
English
Weight
374 KB
Volume
19
Category
Article
ISSN
0018-9464

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