Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

Analysis of N isotope depth profiles in

Analysis of N isotope depth profiles in search for reaction of implanted nitrogen with substrate near Si3N4–nitride-film and SiO2-glass-substrate interface

✍ N. Matsunami; T. Murase; M. Tazawa; S. Ninad; O. Fukuoka; T. Shimura; M. Sataka; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 319 KB

We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi