Depth Profiling by Combined SIMS-ESDMS Analysis: a New Surface Analytical Technique
✍ Scribed by Seki, S.; Sumiya, H.; Muto, K.; Tamura, H.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 460 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Electron-stimulated desorption mass spectrometry (ESDMS), a new technique based on the mass analysis of ions desorbed by a high-energy (several keV) electron beam, has analytical features that complement SIMS. The ESDMS has high sensitivity in the surface analysis of both adsorbates and the Ðrst one or two monolayers of substrate constituents. The variations in ESDMS signal intensities and in the sampling surface depth with time were negligible even in a one-monolayer sample. Using this combined SIMS-ESDMS technique, depth proÐling analysis was performed for several di †erent metal layers deposited on wafers and for a boron-implanted wafer. The sample depth was changed by sputtering with an ion beam, and the surface analysis at each depth was done by ESDMS with the ion beam o †. The ion proÐles by SIMS-ESDMS closely coincided with the SIMS proÐles. The SIMS-ESDMS technique should be particularly useful for thin layered samples, because the signal-to-noise ratio can be improved by accumulating the ESDMS signals for as long as required without changing the sampling depth under continuous bombardment by the electron beam.