Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences
✍ Scribed by D. Fink; J.P. Biersack; M. Müller; L.H. Wang; V.K. Cheng; R. Kassing; K. Masseli; M. Weiser; S. Kalbitzer
- Book ID
- 103952577
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 472 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Nitrogen was implanted at an energy of 1 and 1.5 MeV up to concentrations of typically 0.1-1 at.% into various metals, semiconductors and polymers. The depth profiles were analysed by means of nuclear reaction analysis techniques with thermal neutrons and protons, and by secondary ion mass spectrometry, and compared with theoretical predictions (TRIM Monte Carlo code with Ziegler-Biersack-Littmark electronic stopping power). For the metals and semiconductors, reasonable agreement was found, whereas nitrogen in polymers redistributes after implantation essentially according to the depth profile of electronic excitation and ionization. The 14N profiling shows that, as well as the implanted ions, a considerable background of natural nitrogen exists in concentrations of up to O. 1 at. %.