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Deposition of sputtered iridium oxide—Influence of oxygen flow in the reactor on the film properties

✍ Scribed by E. Slavcheva; U. Schnakenberg; W. Mokwa


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
683 KB
Volume
253
Category
Article
ISSN
0169-4332

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Influence of the oxygen/argon ratio on t
✍ L. Pereira; P. Barquinha; E. Fortunato; R. Martins 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 239 KB

In this work we have focused our attention on the role of the gas mixture (O 2 /Ar) used during HfO 2 thin film processing by r.f. magnetron sputtering, to produce dielectrics with suitable characteristics to be used as gate dielectric. Increasing the O 2 /Ar ratio from 0 to 0.2, the films propertie