Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea
Deposition and characterization of electroless Ni–Co–P alloy for diffusion barrier applications
✍ Scribed by Anuj Kumar; Mukesh Kumar; Dinesh Kumar
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 568 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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