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Depletion of charge carriers in electronic polycrystalline silicon

✍ Scribed by H. Khlyap; V. Tsmots; L. Pankiv; D. Labovka


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
175 KB
Volume
7
Category
Article
ISSN
1369-8001

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πŸ“œ SIMILAR VOLUMES


Temperature dependence of carrier transp
✍ J.Y. Lee; F.Y. Wang πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 512 KB

The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.