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Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures

✍ Scribed by Sánchez-Rojas, J. L.; Sacedón, A.; González-Sanz, F.; Calleja, E.; Muñoz, E.


Book ID
121220797
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
391 KB
Volume
65
Category
Article
ISSN
0003-6951

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