Dependence of the Total Mobility in a One-Band Model Applicationto n-Type MoTe2

✍ Scribed by A. Conan; A. Bonnet; M. Zoaeter; D. Ramoul

• Book ID: 104548624
• Publisher: John Wiley and Sons
• Year: 1984
• Tongue: English
• Weight: 418 KB
• Volume: 124
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221240144

✦ Synopsis

Abstract

In a one‐band model, the total carrier mobility relations, deduced from the Debye‐Conwell formula and Mathiessen's rule, are compared. With the help of these two laws the resultant mobility and the thermoelectric power (TEP) kinetic term variations are given. For n‐type MoTe~2~ single crystals, it is shown that a classical compensated semiconductor model can explain all the experimental results (electrical conductivity, TEP). A good accuracy is obtained by the use of Mathiessen'srule with exponents departing not much from the theoretical values. The model adopted is in good agreement with dichalcogenides band structure calculations. A donor level arising from the presence of bromine impurities, is located at 9.5 meV from the conduction band.