Dependence of the Phenomenological Energy Relaxation Time on Electric Field in n-Si and n-Ge at 77 °K

✍ Scribed by A. Dargys; T. Banys

• Publisher: John Wiley and Sons
• Year: 1972
• Tongue: English
• Weight: 434 KB
• Volume: 52
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220520241

✦ Synopsis

Abstract

A method to measure the dependence of energy relaxation time of hot carriers τ~ϵ~ in semiconductors is proposed. The method is based on the dependence of the phase of the second harmonic ϑ on τ~ϵ~. The relationship between ϑ and τ~ϵ~ was found from equations of the momentum balance and conductivity relaxation. The dependence of τ~ϵ~ on the de electric field in n‐Go and n‐Si at a lattice temperature of 77°K was measured. In n‐Si the influence of redistribution of electrons among different valleys on the phase of thosecond harmonic was observed.