Dependence of magnetic properties on the
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Haider, Muhammad B. ;Constantin, Costel ;Al-Brithen, Hamad ;Caruntu, Gabriel ;O'
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Article
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2005
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John Wiley and Sons
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English
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## Abstract MnGaN has been grown by radio frequency N plasmaβassisted molecular beam epitaxy. MnGaN samples were grown on MOCVD GaN(0001)/sapphire(0001) at substrate temperature of 550 Β°C under different Ga/N flux ratios leading to 4 different growth regimes: Nβrich, slight metalβrich, metalβrich,