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Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants

✍ Scribed by Katsuhiro Yokota; Masanori Sakaguchi; Hiroki Inohara; Hiromi Nakanishi; Susumu Tamura; Yuuji Horino; Akiyoshi Chayahara; Mamoru Satho; Kiyohito Hirai; Hiromichi Takano; Mashao Kumagaya

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 653 KB
Volume: 37
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)90097-3

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