Carrier lifetime dependence on doping, m
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E. Gaubas; J. Vanhellemont; E. Simoen; I. Romandic; W. Geens; P. Clauws
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Article
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2007
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Elsevier Science
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English
β 229 KB
Results are presented of a comparative study of the dependence of carrier recombination characteristics on excitation and dopant concentration in Si and Ge. The bulk lifetime observations are simulated by combining the Shockley-Read-Hall model with Auger recombination above a doping concentration th