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Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field

✍ Scribed by F. Ungan; E. Kasapoglu; H. Sari; I. Sökmen

Book ID: 111623770
Publisher: Springer
Year: 2011
Tongue: English
Weight: 356 KB
Volume: 82
Category: Article
ISSN: 1434-6036
DOI: 10.1140/epjb/e2011-20081-6

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Using a variational approach within the effective mass approximation we calculate the binding energy of the ground and some excited donor impurity states in quantum-well wires with rectangular and cylindrical transversal sections under the action of applied electric fields. We study the binding ener