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Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films

✍ Scribed by B.S Sahu; P Srivastava; O.P Agnihotri; H.C Lee; B.R Sekhar; S Mahapatra; M.K Tiwari

Book ID: 108388773
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 152 KB
Volume: 446
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(03)01320-8

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## Abstract In this work, we study the influence of oxygen additive in the gas phase on hydrogen impurity incorporation into thick nanocrystalline diamond (NCD) films. Various diamond samples were grown on large silicon wafers of 5.08 cm diameter by adjusting the amount of oxygen and nitrogen addit