Dependence of DC Parameters on Layout and Low-Frequency Noise Behavior in Strained-Si nMOSFETs Fabricated by Stress-Memorization Technique

✍ Scribed by . Yao-tsung Huang; . San Lein Wu; . Shoou Jinn Chang; . Cheng Wen Kuo; . Ya Ting Chen; . Yao-chin Cheng; O. Cheng

• Book ID: 124157537
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 469 KB
• Volume: 31
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2010.2044477