Narrow metal wires patterned on Si(100) wafers by conventional e-beam lithography have been subsequently mechanically modiΓed with an atomic force microscope. Using the line resistance as an indicator of the progress of the modiΓcation, narrow insulating gaps were successfully machined into the line
Dependence of Coulomb blockade in ultrasmall single tunnel junctions on tunnel resistance
β Scribed by Yoshihiro Shimazu; Seiichiro Ikehata; Shun-ichi Kobayashi
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 202 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
We studied small-capacitance single tunnel junctions with various tunnel resistances. In order to reduce the environmental effect, high-resistance leads were adopted for measurement. We observed the gradual weakening and disappearance of the Coulomb blockade as the tunnel resistance in the absence of charging effects is lowered below the resistance quantum. As the tunnel resistance increases above the resistance quantum, the zero-bias resistance divided by the tunnel resistance tends to flatten off. The experimental result is in good agreement with the theory of Brown and Sim~inek.
π SIMILAR VOLUMES
A non-perturbative calculation is performed for Coulomb blockade in a small tunnel junction, by use of the closed-time-path Green's function and Odintsov's polaron formulation. Self consistent forms for the currentvoltage (I-V) characteristics, the damping function, the fluctuation function, and the