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Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method

โœ Scribed by T. Yamamoto; T. Sakemi; K. Awai; S. Shirakata


Book ID
113936501
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
97 KB
Volume
451-452
Category
Article
ISSN
0040-6090

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Effects of substrate temperature on crys
โœ Takahiro Yamada; Aki Miyake; Seiichi Kishimoto; Hisao Makino; Naoki Yamamoto; Te ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 261 KB

The effects of substrate temperature, T s , on the crystallinity and the electrical properties of Ga-doped ZnO films (GZO) with a thickness of 200 nm were investigated. GZO films were prepared on glass substrates at various T s in the range from 150 to 400 ยฐC by ion-plating method with DC arc discha