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Density of valence states of As2O3 and Sb2O3

โœ Scribed by A. Kosakov; H. Neumann; G. Leonhardt


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
134 KB
Volume
62
Category
Article
ISSN
0375-9601

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Systematic temperature-dependent capacitance-voltage and conductance measurements were used to study the electrical characteristics of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) oxides on In 0.2 Ga 0.8 As/GaAs. The distribution of interfacial density of states (D it ) within the